BST15 |
RFQ for BST15 Required Field |
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| Technical/Catalog Information | BST15,115 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 200V |
| Current - Collector (Ic) (Max) | 200mA |
| Power - Max | 1.3W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 5mA, 50mA |
| Frequency - Transition | 15MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-89-3, TO-243-3 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | 568; SOT89; ; 3 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BST15,115 BST15,115 |
| Product | Manufacturers | Pack | D/C |
| BST15 | - | SOT-89 | 07/08+ |
Typical Application |
Features |
| · General purpose switching and amplification. | · Low current (max. 200 mA)· High voltage (max. 300 V). |
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage BST15 BST16 |
open emitter | - - |
-200 -350 |
V V |
| VCEO | collector-emitter voltage BST15 BST16 |
open base | - - |
-200 -300 |
V V |
| VEBO | emitter-base voltage BST15 BST16 |
open collector | - | -4 -6 |
V V |
| IC | collector current (DC) | - | -200 | mA | |
| ICM | peak collector current | - | -400 | mA | |
| IBM | peak base current | - | -200 | mA | |
| Ptot | total power dissipation | Tamb 25 °C; note 1 | - | 1.3 | W |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 | ||
| Tamb | operating ambient temperature | -65 | +150 |
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook
